Semiconductor memory device and method for manufacturing same

ABSTRACT

According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body by alternately stacking an insulating film and a conductive film. The method includes forming a trench in the stacked body. The trench extends in one direction and divides the conductive film. The method includes burying a diblock copolymer in the trench. The method includes phase-separating the diblock copolymer into a plurality of first blocks and an insulative second block extending in a stacking direction of the insulating film and the conductive film. The method includes forming a plurality of holes by removing the first blocks. The method includes forming charge accumulation layers on inner surfaces of the holes. And, the method includes forming a plurality of semiconductor pillars extending in the stacking direction by burying a semiconductor material in the holes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. § 120 from U.S. application Ser. No. 16/809,735 filedMar. 5, 2020, which is a divisional of U.S. application Ser. No.15/635,398 filed Jun. 28, 2017, which is a division of U.S. applicationSer. No. 14/981,526 filed Dec. 28, 2015 (now U.S. Pat. No. 9,728,550issued Aug. 8, 2017), which is a continuation of U.S. application Ser.No. 13/344,757 filed Jan. 6, 2012 (now U.S. Pat. No. 9,385,137 issuedJul. 5, 2016), and claims the benefit of priority under 35 U.S.C. § 119from Japanese Patent Application No. 2011-138387 filed Jun. 22, 2011,the entire contents of each of which are incorporated herein byreference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice and a method for manufacturing the same.

BACKGROUND

Recently, as a new memory device, a nonvolatile memory based on thevertical MONOS (metal-oxide-nitride-oxide-silicon) structure has beenproposed. In manufacturing this memory device, conductive films andinsulating films are alternately stacked to form a stacked body. Holesextending in the stacking direction are formed in the stacked body. Acharge accumulation layer is formed on the inner surface of this hole.Then, a silicon pillar is buried in the hole. Thus, a memory transistoris formed at each closest point between the conductive film and thesilicon pillar.

However, in the future, the packing density of memory devices will befurther increased. Then, the number of stacked conductive films isincreased. Furthermore, the diameter of the hole is reduced, and theaspect ratio of the hole is increased. This makes it very difficult toform the hole with a vertical side surface, and causes the diameter ofthe hole to decrease downward. In this case, the upper portion and thelower portion of the hole have different diameters. This causesvariations in the characteristics of the memory transistors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are sectional views illustrating a semiconductor memorydevice according to a first embodiment;

FIG. 2 is a sectional view illustrating a silicon pillar and itsneighborhood in the semiconductor memory device according to the firstembodiment;

FIGS. 3A to 13B are process views illustrating a method formanufacturing a semiconductor memory device according to the firstembodiment;

FIGS. 14A to 15B are process views illustrating a method formanufacturing a semiconductor memory device according to a comparativeexample;

FIGS. 16A and 16B are sectional views illustrating a semiconductormemory device according to the comparative example;

FIGS. 17A and 17B are sectional views illustrating a semiconductormemory device according to a second embodiment;

FIGS. 18A and 18B are process views illustrating a method formanufacturing a semiconductor memory device according to the secondembodiment;

FIGS. 19A and 19B are sectional views illustrating a semiconductormemory device according to a third embodiment; and

FIGS. 20A to 21B are process views illustrating a method formanufacturing a semiconductor memory device according to the thirdembodiment.

DETAILED DESCRIPTION

In general, a semiconductor memory device includes a stacked body, aplurality of semiconductor pillars, charge accumulation layers and aninsulating member. The stacked body includes an insulating film and aconductive film alternately stacked therein. A trench is formed in thestacked body. The trench extends in one direction. The conductive filmis divided by the trench. The plurality of semiconductor pillars areprovided in the trench. The semiconductor pillars extend in a stackingdirection of the insulating film and the conductive film. Each of thecharge accumulation layers is provided around each of the semiconductorpillars. The insulating member is provided between the chargeaccumulation layers in the trench.

In general, a method for manufacturing a semiconductor memory deviceincludes forming a stacked body by alternately stacking an insulatingfilm and a conductive film. The method includes forming a trench in thestacked body. The trench extends in one direction and divides theconductive film. The method includes burying a diblock copolymer in thetrench. The method includes phase-separating the diblock copolymer intoa plurality of first blocks and an insulative second block extending ina stacking direction of the insulating film and the conductive film. Themethod includes forming a plurality of holes by removing the firstblocks. The method includes forming charge accumulation layers on innersurfaces of the holes. And, the method includes forming a plurality ofsemiconductor pillars extending in the stacking direction by burying asemiconductor material in the holes.

Embodiments of the invention will now be described with reference to thedrawings.

First, a first embodiment is described.

FIGS. 1A and 1B are sectional views illustrating a semiconductor memorydevice according to the embodiment. FIG. 1A shows a cross sectionparallel to the upper surface of the silicon substrate. FIG. 1B shows across section perpendicular to the upper surface of the siliconsubstrate.

FIG. 2 is a sectional view illustrating a silicon pillar and itsneighborhood in the semiconductor memory device according to theembodiment.

Here, FIG. 1B is a sectional view taken along line A-A′ shown in FIG.1A.

As shown in FIGS. 1A and 1B and 2, the semiconductor memory device 1according to the embodiment includes a silicon substrate 10. On thesilicon substrate 10, a memory cell region populated with memory cells,and a peripheral circuit region (not shown) populated with drivercircuits are established. The peripheral circuit region is locatedaround the memory cell region.

In the memory cell region, an insulating film 11 is provided on thesilicon substrate 10. A conductive film 12 is provided on the insulatingfilm 11. On the conductive film 12, a plurality of insulating films 14and conductive films 15 are alternately stacked to constitute a stackedbody ML. Here, the number of insulating films 14 and conductive films 15depicted in FIG. 1B is only three for each. However, in practice, moreinsulating films 14 and conductive films 15 may be stacked. On thestacked body ML, an insulating film 16, a conductive film 17, and aninsulating film 18 are formed in this order. The conductive films 12,15, and 17 are formed from a conductive material such asimpurity-containing polysilicon. On the other hand, the insulating films11, 14, 16, and 18 are formed from an insulating material such assilicon oxide.

In the following, for convenience of description, an XYZ orthogonalcoordinate system is herein introduced. In this coordinate system, thetwo directions parallel to the upper surface of the silicon substrate 10and orthogonal to each other are referred to as X and Y directions. Thedirection orthogonal to both the X and Y directions, i.e., the stackingdirection of the layers, is referred to as Z direction.

Trenches 20 and 21 extending in the Y direction are alternately formedin the stacked body ML, the insulating film 16, and the conductive film17. The trench 20 penetrates through the insulating film 18, theconductive film 17, the insulating film 16, and the stacked body ML tothe conductive film 12. The trench 21 penetrates through the lowerportion of the insulating film 18, the conductive film 17, theinsulating film 16, and the portion of the stacked body ML except thelowermost insulating film 14. However, the trench 21 does not penetratethrough the upper portion of the insulating film 18 and the lowermostinsulating film 14.

The conductive film 15 is divided by the trenches 20 and 21 into aplurality of control gate electrodes CG extending in the Y direction.The conductive film 17 is divided by the trenches 20 and 21 into aplurality of select gate electrodes SG extending in the Y direction. Thetrench 20 is shaped like a generally rectangular solid. The trench 20 islongest along its depth d, i.e., the length in the Z direction. Thetrench 20 is second longest along its longitudinal length l, i.e., thelength in the Y direction. The trench 20 is shortest along its width w,i.e., the length in the X direction. That is, these dimensions satisfyd>l>w.

In the trench 20, a plurality of silicon pillars SP extending in the Zdirection (stacking direction) are provided. The silicon pillar SP isformed from impurity-doped polysilicon. In each trench 20, the siliconpillars SP are equally spaced in a line along the Y direction. Thenumber of silicon pillars SP provided in each trench 20 is e.g. three.

The silicon pillar SP is shaped like a circular column with the centralaxis extending in the Z direction in which the two side portions of thiscircular column opposed to the inner surface of the trench 20 aretrimmed along the YZ plane. That is, the region 25 of the side surfaceof the silicon pillar SP opposed to the inner surface of the trench 20is parallel to the YZ plane and parallel to the side surface of thetrench 20. Hence, as viewed in the Z direction, the outer edge of thesilicon pillar SP includes a pair of circular arcs and a pair of linesegments.

In the upper surface of the conductive film 12, a recess 12 a shapedlike a generally rectangular solid with the longitudinal directionaligned with the X direction is formed. Inside the recess 12 a, acoupling member 26 made of impurity-doped polysilicon is provided. Thecoupling member is shaped like a generally rectangular solid with thelongitudinal direction aligned with the X direction. Both end portionsof the coupling member 26 are exposed at the bottom surface of twoadjacent trenches 20. The central portion of the coupling member 26 islocated immediately below the trench 21. To the upper surfaces of bothend portions of the coupling member 26, the lower ends of two siliconpillars SP adjacent in the X direction are coupled. The coupling member26 is formed integrally with these two silicon pillars SP. Hence, thesetwo silicon pillars SP are connected to each other via the couplingmember 26. One of the two silicon pillars SP connected to both ends ofone coupling member 26 is connected to a source line (not shown), andthe other is connected to a bit line (not shown). The source line isprovided on the select gate electrode SG and extends in the Y direction.The bit line is provided on the source line and extends in the Xdirection.

A memory film 30 is provided around the silicon pillar SP, i.e., on theentire region of the side surface, and around the coupling member 26. Inthe memory film 30, a tunnel layer 31, a charge accumulation layer 32,and a block layer 33 are stacked sequentially from inside, i.e., fromthe side of the silicon pillar SP and the coupling member 26. The tunnellayer 31 is a layer which is normally insulative, but passes a tunnelcurrent under application of a prescribed voltage in the range of thedriving voltage of the semiconductor memory device 1. The tunnel layer31 is formed from e.g. silicon oxide. The charge accumulation layer 32is a layer capable of trapping charge, and is formed from e.g. siliconnitride. The block layer 33 is a layer which substantially blocks theflow of current even under application of voltage in the range of thedriving voltage of the semiconductor memory device 1. The block layer 33is formed from e.g. silicon oxide. In this case, the memory film 30 isan ONO (oxide-nitride-oxide) film. Thus, the control gate electrode CG,the memory film 30, and the silicon pillar SP constitute a MONOSstructure. The silicon pillar SP is insulated from the conductive film12, the control gate electrode CG, and the select gate electrode SG bythe memory film 30.

Between the memory films 30 in the trench 20, an insulating member 28 isprovided. The insulating member 28 is formed primarily from siliconoxide. However, the insulating member 28 is a member formed by a methoddifferent from that for the insulating films 11, 14, 16, and 18. Hence,the composition of the insulating member 28 is slightly different fromthe composition of these insulating films. The insulating member 28contains a trace amount of organic residual components besides siliconoxide. As described later, for instance, the insulating member 28 isformed by heat treatment of polyethylene oxide in a diblock copolymer ofpolystyrene and polyethylene oxide.

On the other hand, in the trench 21, an insulating member 29 shaped likea plate along the YZ plane is provided. The insulating member 29 isformed from e.g. silicon nitride.

In the semiconductor memory device 1, the silicon pillar SP functions asa channel, the control gate electrode CG functions as a gate electrode,and the charge accumulation layer 32 accumulates electrons. Thus, avertical memory transistor MT is formed at each closest point betweenthe silicon pillar SP and the control gate electrode CG. In thesemiconductor memory device 1, a plurality of memory transistors MT arearranged three-dimensionally along the X, Y, and Z directions.

Next, a method for manufacturing a semiconductor memory device accordingto the embodiment is described.

FIGS. 3A to 13B are process views illustrating the method formanufacturing a semiconductor memory device according to the embodiment.Here, the figures labeled with “A” are plan views. The figures labeledwith “B” are sectional views taken along line A-A′ shown in thecorresponding figures labeled with “A”.

First, as shown in FIGS. 3A and 3B, a silicon substrate 10 is prepared.Next, in the peripheral circuit region (not shown) of this siliconsubstrate 10, transistors and wirings, for instance, constituting drivercircuits are formed.

Next, by e.g. the CVD (chemical vapor deposition) process, an insulatingfilm 11 made of silicon oxide is formed on the silicon substrate 10.Then, a conductive film 12 made of impurity-containing polysilicon isformed on the insulating film 11.

Next, as shown in FIGS. 4A and 4B, a resist film 41 is formed on theconductive film 12. Next, by the lithography technique, a plurality ofstrip-shaped openings 41 a with the longitudinal direction aligned withthe X direction are formed in the resist film 41. The openings 41 a arearranged in a matrix configuration along the X and Y directions.

Next, as shown in FIGS. 5A and 5B, the resist film 41 (see FIGS. 4A and4B) is used as a mask to perform dry etching. Thus, a recess 12 a shapedlike a rectangular solid with the longitudinal direction aligned withthe X direction is formed in the upper portion of the conductive film12. Subsequently, ashing is performed to remove the resist film 41.

Next, by the CVD process, silicon nitride is deposited on the entiresurface. Next, dry etching is performed to remove the portion of thesilicon nitride deposited on the upper surface of the conductive film12. Thus, a sacrificial material 42 made of silicon nitride is buried inthe recess 12 a.

Next, as shown in FIGS. 6A and 6B, insulating films 14 made of siliconoxide and conductive films 15 made of polysilicon are alternately formedon the conductive film 12 and the sacrificial material 42. Thus, astacked body ML is formed. Next, on the stacked body ML, an insulatingfilm 16 made of silicon oxide, a conductive film 17 made of polysilicon,and an insulating film 18 a made of silicon oxide are deposited in thisorder. Next, a resist film 43 is formed on the insulating film 18 a.Next, by the lithography technique, a plurality of groove-shapedopenings 43 a extending in the Y direction are formed in the resist film43.

Next, as shown in FIGS. 7A and 7B, the resist film 43 (see FIGS. 6A and6B) is used as a mask to perform dry etching to selectively remove theinsulating film 18 a, the conductive film 17, the insulating film 16,and the stacked body ML. At this time, the lowermost insulating film 14of the stacked body ML is left unetched. Thus, a trench 21 extending inthe Y direction is formed in the portion of the stacked body ML exceptthe lowermost insulating film 14, the insulating film 16, the conductivefilm 17, and the insulating film 18 a. The trench 21 is formedimmediately below the opening 43 a at a position linking the immediatelyoverlying regions of the X-direction central portions of the sacrificialmaterials 42. Subsequently, ashing is performed to remove the resistfilm 43.

Next, as shown in FIGS. 8A and 8B, silicon nitride is deposited by theCVD process. Next, dry etching is performed to remove the portion of thesilicon nitride deposited on the insulating film 18 a. Thus, aninsulating member 29 made of silicon nitride is buried in the trench 21.Next, silicon oxide is deposited by the CVD process to form aninsulating film 18 b on the insulating film 18 a. The insulating films18 a and 18 b constitute an insulating film 18.

Next, as shown in FIGS. 9A and 9B, a resist film 44 is formed on theinsulating film 18. Next, by the lithography technique, an opening 44 aextending in the Y direction is formed in the resist film 44. Theopening 44 a is formed at a position linking the immediately overlyingregions of both X-direction end portions of the sacrificial materials42.

Next, as shown in FIGS. 10A and 10B, the resist film 44 (see FIGS. 9Aand 9B) is used as a mask to perform dry etching to selectively removethe insulating film 18, the conductive film 17, the insulating film 16,and the stacked body ML. Thus, a trench 20 extending in the Y directionis formed immediately below the opening 44 a. The trench 20 is shapedlike a generally rectangular solid. In the trench 20, the length l ismade longer than the width w, and the depth d is made longer than thelength l. That is, these dimensions are set to satisfy d>l>w. At thebottom surface of the trench 20, the conductive films 12 and thesacrificial materials 42 are exposed and alternately arranged along theY direction. Thus, the conductive film 17 is divided by the trenches 20and 21 into a plurality of select gate electrodes SG. Furthermore, eachconductive film 15 is divided by the trenches 20 and 21 into a pluralityof control gate electrodes CG. Subsequently, ashing is performed toremove the resist film 44.

Next, by a self-organization technique, a cylindrical (circularcolumnar) hole is formed in the trench 20. A method for this isspecifically described below.

First, as shown in FIGS. 11A and 11B, as a block copolymer, a diblockcopolymer is applied and buried in the trench 20. The diblock copolymeris a polymer of two kinds of macromolecules which are phase-separatedunder an appropriate condition. Various materials can be used as thediblock copolymer. In the embodiment, a polymer of polystyrene (PS) andpolyethylene oxide (PEO) is used (this polymer is hereinafter referredto as “PS-PEO polymer”). In the PS-PEO polymer, polystyrene (PS) groupsand polyethylene oxide (PEO) groups are coupled in a straight chain.

Next, by e.g. heat treatment, the diblock copolymer is phase-separated.Thus, in the trench 20, the PS-PEO polymer as the diblock copolymer isseparated into a block 46 a resulting from polystyrene (PS) groups and ablock 46 b resulting from polyethylene oxide (PEO) groups. The block 46a is made of an organic material. The block 46 b is made of siliconoxide in which a small amount of organic residual material is leftbehind. That is, the block 46 b is substantially made of an inorganicmaterial.

The inner surface of the trench 20 includes the insulating films 14, 16,and 18 made of silicon oxide, the conductive films 12, 15, 17 made ofsilicon, and the sacrificial material 42 made of silicon nitride. Thus,the inner surface of the trench 20 is entirely hydrophilic. On the otherhand, polyethylene oxide (PEO) is hydrophilic, whereas polystyrene (PS)is hydrophobic. That is, the diblock copolymer used in the embodiment isa copolymer having hydrophobic first molecules and hydrophilic secondmolecules. Hence, the interfacial energy between the hydrophilic innersurface of the trench 20 and hydrophilic polyethylene oxide (PEO) islower than the interfacial energy between the hydrophilic inner surfaceof the trench 20 and hydrophobic polystyrene (PS). Thus, in each PS-PEOpolymer, the polyethylene oxide (PEO) group is coupled to the innersurface of the trench 20, whereas the polystyrene (PS) group is locatedat a position spaced from the inner surface of the trench 20 by thelength of the PEO group. As a result, the block 46 b resulting frompolyethylene oxide (PEO) groups is aggregated along the inner surface ofthe trench 20. On the other hand, the block 46 a resulting frompolystyrene (PS) groups is aggregated at a position spaced by a fixeddistance from the inner surface of the trench 20.

Here, the shape and position of the blocks 46 a and 46 b can becontrolled by selecting e.g. the size and shape of the trench 20, thetotal molecular weight of the PS-PEO polymer, the ratio between PEOgroups and PS groups, and the heat treatment condition for phaseseparation. For instance, the shape of the block 46 a can be controlledby selecting the ratio between PS groups and PEO groups in the PS-PEOpolymer. For instance, the ratio between PS groups and PEO groups beingapproximately 1:1 produces a lamellar structure in which the blocks 46 aand the blocks 46 b are alternately arranged. If the ratio of PS groupsis lower, the block 46 a is shaped like a cylinder (circular column). Ifthe ratio of PS groups is still lower, the block 46 a is shaped like aball. Furthermore, the formation position of the block 46 a can becontrolled by selecting e.g. the size and shape of the trench 20.

Thus, by appropriately selecting these parameters, the blocks 46 a canbe aggregated like a cylinder extending in the Z direction immediatelyabove both X-direction end portions of the sacrificial material 42. Forinstance, the block 46 a can be shaped like a cylinder by making theratio of PS groups lower than the ratio of PEO groups. Here, thediameter of the cylindrical block 46 a has a fixed value resulting fromthe molecular structure of the PS-PEO polymer, such as the length of thePS group. Furthermore, in the vertical direction (Z direction), thediameter of the block 46 a is made uniform. By adjusting the molecularstructure of the PS-PEO polymer, the diameter of the block 46 a can becontrolled to an arbitrary value. In one trench 20, a plurality ofblocks 46 a are formed, and the block 46 b is packed in the trench 20 soas to enclose this plurality of blocks 46 a. Hence, the blocks 46 a arenot in contact with the inner surface of the trench 20.

By way of example, the depth d of the trench 20 is 300 nm (nanometers),the length l is 70 nm, and the width w is 20 nm. In this case, the totalmolecular weight of the PS-PEO polymer is set to approximately 10000,the ratio between PS groups and PEO groups is set to approximately 1:2,the temperature of heat treatment for phase separation is set toapproximately 150-250° C., and the time of this heat treatment is set toseveral minutes. Then, the block 46 a resulting from PS groups can beshaped like a cylinder with a diameter of approximately 10 nm.

Next, as shown in FIGS. 12A and 12B, by wet etching with hydrofluoricacid or dry etching, the block 46 b resulting from polyethylene oxide(PEO) is etched back to expose the upper surface of the block 46 a (seeFIGS. 11A and 11B). At this time, the exposed surface of the insulatingfilm 18 made of silicon oxide is etched to some extent.

Next, by dry etching with an etching gas containing oxygen or hydrogenand not containing halogens, polystyrene (PS) is selectively etchedrelative to polyethylene oxide (PEO) and silicon oxide to remove theblock 46 a (see FIGS. 12A and 12B). Thus, after the block 46 a isremoved, a hole 47 is formed. The hole 47 extends in the Z direction.The upper surface of the hole 47 is opened. At the bottom surface of thehole 47, the block 46 b is left behind. The hole 47 is formed for eachblock 46 a. Hence, a plurality of holes 47 are formed in each trench 20.Here, the shape of the hole 47 is determined by the shape of the block46 a. Hence, the hole 47 is shaped like a cylinder (circular column)with a vertical inner surface and a uniform diameter.

Next, as shown in FIGS. 13A and 13B, by wet etching with hydrofluoricacid, the block 46 b is etched through the hole 47. Thus, the sidesurface of each hole 47 is set back and partly reaches the inner surfaceof the trench 20, and the bottom surface of the hole 47 is lowered andreaches the bottom surface of the trench 20. This increases the diameterand depth of the hole 47, and changes the shape of the hole 47. That is,as viewed in the Z direction, the shape of the hole 47 includes a pairof circular arcs made of the side surface of the block 46 b, and a pairof line segments made of the side surfaces of the trench 20.Furthermore, the bottom surface of the hole 47 includes the sacrificialmaterial 42.

Next, by wet etching with high temperature phosphoric acid, thesacrificial material 42 made of silicon nitride is removed through thehole 47. Thus, the inside of the recess 12 a of the conductive film 12is made hollow to form a U-shaped hole 48 made of the recess 12 a andthe holes 47. Each U-shaped hole 48 includes one recess 12 a and twoholes 47 communicating with both end portions of the recess 12 a.

Next, as shown in FIGS. 1A and 1B and 2, by the CVD process, a blocklayer 33 made of silicon oxide, a charge accumulation layer 32 made ofsilicon nitride, and a tunnel layer 31 made of silicon oxide aredeposited in this order on the inner surface of the U-shaped hole 48.The stacked film made of the block layer 33, the charge accumulationlayer 32, and the tunnel layer 31 constitutes a memory film 30. Next,polysilicon is deposited on the entire surface. Next, dry etching isperformed to remove the portion of the deposited polysilicon located onthe upper surface of the insulating film 18. Thus, polysilicon is buriedin the U-shaped hole 48 to form a coupling member 26 in the recess 12 aand a silicon pillar SP in the hole 47. Here, the block 46 b constitutesan insulating member 28. Next, on the insulating film 18, an upperwiring structure including source lines (not shown) and bit lines (notshown) is formed. Thus, the semiconductor memory device 1 according tothe embodiment is manufactured.

Next, the operation and effect of the embodiment are described.

In the embodiment, in manufacturing the semiconductor memory device 1, atrench 20 is formed in the stacked body ML. A diblock copolymer isburied in the trench 20 and phase-separated to form a cylindrical block46 a and a block 46 b surrounding the block 46 a in the trench 20. Then,a hole 47 is formed by removing only the block 46 a. A memory film 30 isformed on the inner surface of the hole 47, and a silicon pillar SP isformed inside the hole 47. Thus, memory transistors MT are formed.

Here, the shape of the block 46 a is determined by the molecularstructure of the diblock copolymer. Thus, the diameter of the block 46 ais made uniform throughout the vertical direction. Hence, the diameterof the hole 47 is also made uniform throughout the vertical direction.That is, the taper angle of the side surface of the hole 47 is madenearly equal to 90°. Thus, throughout the vertical direction, thediameter of the silicon pillar SP is made uniform, and the curvature ofthe memory film 30 is also made uniform. As a result, even if the aspectratio of the hole 47 is increased, the characteristics are made uniformbetween the memory transistor MT formed in the upper end portion of thehole 47 and the memory transistor MT formed in the lower end portion ofthe hole 47. Furthermore, in the embodiment, the holes 47 are formed bythe self-organization technique. Hence, the holes 47 have high shapestability. This also contributes to the uniform characteristics ofmemory transistors MT.

The shape of the blocks 46 a and 46 b after phase separation depends onthe ratio of macromolecules composing the diblock copolymer. In theembodiment, the PS-PEO polymer is used as the diblock copolymer, and theratio of PS groups is made lower than the ratio of PEO groups. Hence,the block 46 a is shaped like a cylinder. Furthermore, the phaseseparation of the diblock copolymer is affected by the inner surface ofthe trench 20. Hence, the formation position of the block 46 a dependson the shape of the trench 20. In the embodiment, the trench 20 isshaped like a generally rectangular solid, with the depth d of thetrench 20 made larger than the length l and the width w, and the lengthl made larger than the width w. That is, these dimensions are set tosatisfy d>l>w. Thus, the phase separation of the diblock copolymerburied in the trench 20 is made less likely to be affected by the bottomsurface of the trench 20, and provided with no structure in the verticaldirection (Z direction). As a result, the cylindrical block 46 a extendsin the vertical direction. Furthermore, because the length l of thetrench 20 is made longer than the width w, the blocks 46 a are arrangedin a line along the longitudinal direction of the trench 20 (Ydirection). Moreover, the block 46 a can be located immediately abovethe sacrificial material 42 by appropriately selecting the relativeposition of the trench 20 with respect to the recess 12 a.

Furthermore, in the semiconductor memory device 1 according to theembodiment, by forming trenches 20 in the stacked body ML, theconductive film 15 is divided into a plurality of control gateelectrodes CG. Then, a hole 47 is formed in part of the trench 20, amemory film 30 is formed on the inner surface of the hole 47, and asilicon pillar SP is provided on the memory film 30. Thus, the memoryfilm 30 is located between the silicon pillar SP and the control gateelectrode CG (conductive film 15) to constitute a memory transistor MT.As a result, two memory transistors MT are located at each intersectionbetween one silicon pillar SP and one conductive film 15, enablingstorage of at least two bits of information. Furthermore, these twomemory transistors MT share the silicon pillar SP. Hence, the packingdensity can be made higher than that in the case of providing a siliconpillar SP for each memory transistor MT.

Moreover, in the semiconductor memory device 1 according to theembodiment, as viewed in the stacking direction (Z direction), the outeredge of the silicon pillar SP includes a pair of circular arcs and apair of line segments. Thus, the region 25 of the side surface of thesilicon pillar SP opposed to the inner surface of the trench 20constitutes a plane parallel to the side surface of the trench 20.Hence, in each memory transistor MT, the silicon pillar SP and thecontrol gate electrode CG have a positional relationship of parallelplates. Thus, the electric field is made less likely to concentrate onone location. Furthermore, also in the memory film 30, the electricfield is applied uniformly in the film thickness direction. Thisstabilizes the operation of the memory transistor MT.

Next, a comparative example of the embodiment is described.

FIGS. 14A to 15B are process views illustrating a method formanufacturing a semiconductor memory device according to the comparativeexample. Here, the figures labeled with “A” are plan views. The figureslabeled with “B” are sectional views taken along line A-A′ shown in thecorresponding figures labeled with “A”.

FIGS. 16A and 16B are sectional views illustrating a semiconductormemory device according to the comparative example. FIG. 16A shows across section parallel to the upper surface of the silicon substrate.FIG. 16B shows a cross section taken along line A-A′ shown in FIG. 16A,i.e., a cross section perpendicular to the upper surface of the siliconsubstrate.

First, the process shown in FIGS. 3A to 8B is performed.

Next, as shown in FIGS. 14A and 14B, a resist film 91 is formed on theinsulating film 18. Next, by using the lithography technique, an opening91 a shaped like e.g. a circle is formed immediately above each of bothX-direction end portions of the sacrificial material 42 in the resistfilm 91. Thus, a hole pattern is formed in the resist film 91.

Next, as shown in FIGS. 15A and 15B, the resist film 91 (see FIGS. 14Aand 14B) is used as a mask to perform dry etching to selectively removethe insulating film 18, the conductive film 17, the insulating film 16,and the stacked body ML. As a result, a hole 92 reaching the sacrificialmaterial 42 (see FIGS. 14A and 14B) is formed immediately below theopening 91 a. In this etching step, the insulating films 18, 16, and 14made of silicon oxide, in particular, are difficult to processvertically. Thus, the side surface of the hole 92 is inevitablyinclined. Hence, the hole 92 is tapered downward. Subsequently, ashingis performed to remove the resist film 91.

Next, by wet etching with high temperature phosphoric acid, thesacrificial material 42 (see FIGS. 14A and 14B) is removed through thehole 92. Thus, two holes 92 adjacent in the X direction are coupledthrough the recess 12 a of the conductive film 12 to form a U-shapedhole 93.

Next, as shown in FIGS. 16A and 16B, like the above first embodiment, bythe CVD process, a block layer 33, a charge accumulation layer 32, and atunnel layer 31 are deposited on the inner surface of the U-shaped hole93. Thus, a memory film 30 is formed. Next, polysilicon is buried in theU-shaped hole 93 to form a silicon pillar SP and a coupling member 26.Thus, the semiconductor memory device according to the comparativeexample is manufactured.

In the comparative example, in the step shown in FIGS. 15A and 15B,holes 92 are formed by dry etching. However, in this case, the sidesurface of the hole 92 is inevitably inclined, and the diameter of thehole 92 decreases downward. One reason for this is the variation in theincident angle of ions used for dry etching. For instance, consider thecase where the incident angle of ions is inclined 5° with respect to thevertical direction (Z direction). In this case, if the aspect ratio ofthe hole 92 exceeds 11.5 (=1/tan(5°)), no ions directly reach the bottomsurface of the hole 92. Then, only the ions once reflected byimpingement on the side surface of the hole 92 reach the bottom surfaceof the hole 92. Thus, in the subsequent etching, the number of ionsdirectly reaching the bottom surface of the hole 92 decreases, and makesvertical processing difficult.

For instance, the diameter of the opening 91 a of the resist film 91 isset to 30 nm (nanometers), and consider the case of forming a hole 92with a depth of 1 μm (micron). Then, the aspect ratio exceeds 30. Inthis case, for the above-mentioned reason, etching is made difficult,and the hole 92 is tapered downward. As a result, in the memorytransistor MT formed in the lower portion of the stacked body ML, ascompared with the memory transistor MT formed in the upper portion, thesilicon pillar SP is made slimmer, and the curvature of the memory film30 is made larger. This causes the amount of charge accumulated in thememory transistor MT to vary with the formation position. Hence, in thesemiconductor memory device according to the comparative example, thecharacteristics of memory transistors MT are varied with the formationposition. This degrades the overall characteristics of the semiconductormemory device.

In contrast, in the semiconductor memory device 1 according to the abovefirst embodiment, the holes 47 are formed by the self-organizationtechnique. Hence, even if the aspect ratio of the hole 47 is increased,the diameter can be made uniform. As a result, the characteristics ofmemory transistors MT can be made uniform. This improves the overallcharacteristics of the semiconductor memory device 1.

Here, the variation in the taper angle of the hole required in thesemiconductor memory device having the three-dimensional structure asdescribed above can be calculated as follows. To limit the variation inthe surface area of the charge accumulation layer 32 to 10% or less, thevariation in the diameter of the hole also needs to be limited to 10% orless. Hence, for instance, in the case where the diameter of the upperend portion of the hole is 30 nm, the diameter of the lower end portionneeds to be set to 27 nm or more. With the depth of the hole set to 1μm, the taper angle of the side surface of the hole needs to be 89.9°(=tan⁻¹(1000/1.5)) or more. That is, the side surface of the hole needsto be nearly vertical. Such processing is very difficult to realize byetching, but easy by using the self-organization technique.

In the comparative example, the hole 92 is formed by lithography and dryetching. Hence, the shape of the hole 92 as viewed in the Z directionmay be deviated from a perfect circle. If the shape of the hole 92 isdeviated from a perfect circle, a portion having a high curvature mayoccur at the inner surface of the hole 92 and the outer surface of thememory film 30 and the silicon pillar SP. The electric field mayconcentrate on this portion. This increases the operational variation atthe time of writing and reading data. Furthermore, because the memoryfilm 30 is formed cylindrically, the electric field applied to the innertunnel layer 31 is made stronger than that applied to the outer blocklayer 33.

In contrast, in the first embodiment, the shape of the hole 47 isdetermined by the molecular structure of the diblock copolymer, andhence made uniform at the molecular level. This suppresses theoperational variation at the writing/reading time. Furthermore, theportion of the memory transistor MT subjected to the electric field hasa planar structure. Hence, the electric field is less likely toconcentrate on this portion.

Furthermore, in the comparative example, the trench 20 (see FIGS. 1A and1B) is not formed. Hence, the conductive film 15 is not divided by thetrench 20 to both sides of the silicon pillar SP. Thus, only one memorytransistor MT is formed at each intersection between one silicon pillarSP and one conductive film 15. As a result, the information storagedensity is halved as compared with the above first embodiment.

Next, a second embodiment is described.

FIGS. 17A and 17B are sectional views illustrating a semiconductormemory device according to the embodiment. FIG. 17A shows a crosssection parallel to the upper surface of the silicon substrate. FIG. 17Bshows a cross section taken along line A-A′ shown in FIG. 17A, i.e., across section perpendicular to the upper surface of the siliconsubstrate.

As shown in FIGS. 17A and 17B, the semiconductor memory device 2according to the embodiment is different from the semiconductor memorydevice 1 (see FIGS. 1A and 1B) according to the above first embodimentin that a guide 51 projected toward the inside of the trench 20 isformed at both side surfaces of the trench 20. The guide 51 is formedfrom the stacked body ML, the insulating film 16, the conductive film17, and the insulating film 18 left behind. The guides 51 areperiodically arranged along the Y direction. The phase of thearrangement is equal at both side surfaces of the trench 20. Thus, theportion of the trench 20 provided with the guide 51 constitutes a narrowwidth portion 52 a having a relatively narrow width. On the other hand,the portion of the trench 20 not provided with the guide 51 constitutesa wide width portion 52 b having a relatively wide width. In each trench20, the narrow width portions 52 a and the wide width portions 52 b arealternately arranged along the Y direction. The silicon pillar SP andthe memory film 30 are located in the wide width portion 52 b.

Next, a method for manufacturing a semiconductor memory device accordingto the embodiment is described.

FIGS. 18A and 18B are process views illustrating the method formanufacturing a semiconductor memory device according to the embodiment.FIG. 18A is a plan view. FIG. 18B is a sectional view taken along lineA-A′ shown in FIG. 18A.

First, the process shown in FIGS. 3A to 10B is performed. Here, as shownin FIGS. 18A and 18B, the pattern of the resist film 44 is adjusted sothat a guide 51 projected toward the inside of the trench 20 is formedat both side surfaces of the trench 20. The guides 51 are periodicallyarranged along the longitudinal direction of the trench 20 (Ydirection). Furthermore, the phase of the arrangement is matched betweenboth side surfaces of the trench 20. Thus, in the trench 20, along itslongitudinal direction (Y direction), narrow width portions 52 a wherethe guides 51 are formed on both sides and the width is relativelynarrow, and wide width portions 52 b where the guides 51 are not formedand the width is relatively wide, are alternately arranged.

Next, like the above first embodiment, a diblock copolymer is buriedinside the trench 20 and phase-separated. At this time, the hydrophilicblock 46 b is formed along the inner surface of the trench 20 includingthe guide 51, whereas the hydrophobic block 46 a is formed at a positionspaced by a prescribed distance from the inner surface of the trench 20including the guide 51. Thus, the block 46 a is formed like a cylinderextending in the Z direction in the central portion of the wide widthportion 52 b. Subsequently, like the above first embodiment, the processshown in FIGS. 12A to 13B is performed. Thus, the silicon pillar SP andthe memory film 30 are located in the wide width portion 52 b of thetrench 20.

According to the embodiment, the guide 51 is provided at the innersurface of the trench 20. This can reliably control the shape andposition of the block 46 a. Thus, the shape and position of the siliconpillar SP and the memory film 30 can be reliably controlled. Theconfiguration, the manufacturing method, and the operation and effect ofthe embodiment other than the foregoing are similar to those of theabove first embodiment.

Next, a third embodiment is described.

FIGS. 19A and 19B are sectional views illustrating a semiconductormemory device according to the embodiment. FIG. 19A shows a crosssection parallel to the upper surface of the silicon substrate. FIG. 19Bshows a cross section taken along line A-A′ shown in FIG. 19A, i.e., across section perpendicular to the upper surface of the siliconsubstrate.

As shown in FIGS. 19A and 19B, the semiconductor memory device 3according to the embodiment is different from the semiconductor memorydevice 1 (see FIGS. 1A and 1B) according to the above first embodimentin that as viewed in the Z direction, the silicon pillar SP is shapedlike a rectangle, and the memory film 30 is shaped like a frame. Betweenthe memory films 30 in the trench 20, an insulating member 28 includinge.g. silicon oxide is provided.

Next, a method for manufacturing a semiconductor memory device accordingto the embodiment is described.

FIGS. 20A to 21B are process views illustrating the method formanufacturing a semiconductor memory device according to the embodiment.The figures labeled with “A” are plan views. The figures labeled with“B” are sectional views taken along line A-A′ shown in the correspondingfigures labeled with “A”.

First, the process shown in FIGS. 3A to 10B is performed.

Next, as shown in FIGS. 20A and 20B, as a block copolymer, a diblockcopolymer is applied and buried in the trench 20. As the diblockcopolymer, for instance, a PS-PEO polymer is used. In the embodiment,the ratio between PS groups and PEO groups is set to approximately 1:1.

Next, by heat treatment, the PS-PEO polymer is phase-separated. Here,the phase structure after separation is a lamellar structure in whichblocks 46 a resulting from PS groups and blocks 46 b resulting from PEOgroups are alternately arranged along the longitudinal direction of thetrench 20 (Y direction). The blocks 46 a and 46 b are both shaped like arectangular column extending in the Z direction. Hence, as viewed in theZ direction, the blocks 46 a and 46 b are both shaped like a rectangle.In the Z direction, each size of the blocks 46 a and 46 b is uniform.Furthermore, the blocks 46 a and 46 b are both in contact with the sidesurface and bottom surface of the trench 20. The upper surface of theblocks 46 a and 46 b is exposed.

Next, as shown in FIGS. 21A and 21B, by dry etching with an etching gascontaining oxygen or hydrogen and not containing halogens, the block 46a is removed. Thus, after the block 46 a is removed, a hole 61 isformed. The hole 61 extends in the Z direction. The upper surface of thehole 61 is opened. At the bottom surface of the hole 61, the sacrificialmaterial 42 is exposed. At part of the side surface of the hole 61, theside surface of the trench 20 is exposed. The shape of the hole 61 isdetermined by the shape of the block 46 a. Hence, the hole 61 is shapedlike a rectangular column with a vertical inner surface and a uniformwidth.

Next, by wet etching with high temperature phosphoric acid, thesacrificial material 42 is removed through the hole 61. Thus, the insideof the recess 12 a of the conductive film 12 is made hollow to form aU-shaped hole 62 made of the recess 12 a and the holes 61. Each U-shapedhole 62 includes one recess 12 a and two holes 61 communicating withboth end portions of the recess 12 a.

Next, as shown in FIGS. 19A and 19B, by the CVD process, a block layer33 (see FIGS. 2A and 2B), a charge accumulation layer 32 (see FIGS. 2Aand 2B), and a tunnel layer 31 (see FIGS. 2A and 2B) are deposited inthis order on the inner surface of the U-shaped hole 62 to form a memoryfilm 30. As viewed in the Z direction, the memory film 30 is shaped likea frame. Next, polysilicon is buried inside the U-shaped hole 62 to forma coupling member 26 in the recess 12 a and a silicon pillar SP in thehole 61. As viewed in the Z direction, the silicon pillar SP is shapedlike a rectangle. The block 46 b left behind constitutes an insulatingmember 28. Next, on the insulating film 18, an upper structure includingsource lines (not shown) and bit lines (not shown) is formed. Thus, thesemiconductor memory device 3 according to the embodiment ismanufactured.

According to the embodiment, the block structure of the phase-separatedPS-PEO polymer is set to a lamellar structure. Thus, the block 46 a canbe formed in contact with the side surface and bottom surface of thetrench 20, with the upper surface of the block 46 a exposed. Hence, thehole 61 can be formed simply by removing the block 46 a. This eliminatesthe need to etch the block 46 b before and after the step of removingthe block 46 a. As a result, the process for manufacturing thesemiconductor memory device 3 can be simplified.

The configuration, the manufacturing method, and the operation andeffect of the embodiment other than the foregoing are similar to thoseof the above first embodiment.

In the examples illustrated in the above embodiments, a copolymer ofpolystyrene (PS) and polyethylene oxide (PEO) is used as a diblockcopolymer. However, the invention is not limited thereto. The diblockcopolymer can be made of any material as long as it is separated intotwo or more kinds of blocks by phase separation, at least one kind ofblocks have a shape extending in the Z direction with uniform thickness,and this block extending in the Z direction can be removed by a suitablemethod. Here, if the block left behind is insulative and stable as adevice material, this block can be directly used as an insulating memberfor separation between the memory films. In view of these points,preferably, the block to be removed is made of an organic material, andthe block to be left behind is made of an inorganic material. However,if the block to be left behind is unsuitable as a device material, thisblock can be replaced by another insulating material after forming thememory film and the silicon pillar.

The embodiments described above can realize a semiconductor memorydevice with uniform characteristics of memory transistors, and a methodfor manufacturing the same.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

1. (canceled)
 2. A semiconductor memory device, comprising: a stackedbody including a plurality of insulating portions and a plurality ofconductive films, each of the insulating portions and each of theconductive films being alternately stacked in a stacking direction abovea substrate, trenches extending in the stacked body in a first directionintersecting with the stacking direction and dividing each of theconductive films in a second direction intersecting with the stackingdirection and the first direction; an underlying conductive layerprovided between the substrate and the stacked body in the stackingdirection; a plurality of semiconductor pillars provided in the trenchesand extending in the stacking direction, lower portions of a firstsemiconductor pillar and a second semiconductor pillar of thesemiconductor pillars being coupled to the underlying conductive layer;a plurality of insulating layers provided around the semiconductorpillars; and an insulating member provided between the insulating layersaround the semiconductor pillars in the trenches, the semiconductorpillars and the insulating member being alternately arranged in thefirst direction in the trenches, a pair of memory transistors beingprovided so as to correspond to regions of each of the semiconductorpillars, the regions facing a pair of side surfaces of one of thetrenches, the side surfaces extending along the first direction, thepair of memory transistors being disposed at an intersection between oneof the semiconductor pillars and one of the conductive films, the pairof memory transistors being arranged in the second direction.
 3. Thedevice according to claim 2, wherein each of the regions includes aplane parallel to the side surfaces of one of the trenches.
 4. Thedevice according to claim 2, wherein each of the insulating layersincludes a tunnel layer.
 5. The device according to claim 2, whereineach of the trenches has a first portion and second portions, a firstdividing distance between divided parts of one of the conductive filmsat the first portion is shorter than a second dividing distance betweenthe divided parts at the second portions, and the semiconductor pillarsare located in the second portions.
 6. The device according to claim 2,wherein the trenches are arranged in the second direction, and the firstsemiconductor pillar is provided in a first one of the trenches and thesecond semiconductor pillar is provided in a second one of the trenches.7. The device according to claim 2, wherein the underlying conductivelayer includes polysilicon.
 8. A semiconductor memory device,comprising: a stacked body including a plurality of conductive filmsstacked and insulated from each other in a stacking direction; aplurality of first trenches extending in the stacked body in a firstdirection intersecting with the stacking direction and dividing each ofthe conductive films in a second direction intersecting with thestacking direction and the first direction; a second trench extending inthe stacking direction between the first trenches and being filled withan insulator; a plurality of pillars provided in each of the firsttrenches and arranged spaced from each other in the first direction,each of the pillars including: a silicon channel extending in thestacking direction, and an insulating layer provided on a firstdirection side and on a second direction side of the silicon channel;and an insulating member provided between the pillars in the firsttrenches, the pillars and the insulating member being alternatelyarranged in the first direction in each of the first trenches, wherein apair of memory transistors are provided so as to correspond to regionsof each of the pillars, the regions facing to one of the conductivefilms at both sides of the second direction.
 9. The device according toclaim 8, wherein regions of side surfaces of the pillars include planesparallel to side surfaces of the first trenches, the side surfaces ofthe pillars facing to the side surfaces of the first trenches.
 10. Thedevice according to claim 8, wherein neither any silicon channel nor anysemiconductor pillar is provided in the second trench.
 11. The deviceaccording to claim 8, wherein the insulating layer includes a tunnellayer.
 12. The device according to claim 8, wherein the insulatingmember includes a portion having a length in the second directionshorter than a dividing distance in the second direction between dividedparts of one of the conductive films via one of the first trenches atplaces where the pillars are located.
 13. The device according to claim8, wherein each of the pillars includes an outer edge consisting of apair of first sides including circular arcs and a pair of second sidesof line segments as viewed in the stacking direction.
 14. The deviceaccording to claim 8, further comprising: a charge accumulation layerprovided between the insulating layer and one of the conductive films;and a block layer provided between the charge accumulation layer and theone of the conductive films, the insulating layer being a tunnel layer.15. The device according to claim 14, wherein the tunnel layer includessilicon and oxygen, the charge accumulation layer includes silicon, andthe block layer includes silicon and oxygen.
 16. A method formanufacturing a semiconductor memory device according to claim 2, themethod comprising: forming the stacked body above the underlyingconductive layer by alternately stacking a plurality of first films anda plurality of second films; forming the trenches in the stacked body,the trenches extending in a first direction and dividing the stackedbody in a second direction, the second direction intersecting with thefirst direction and a stacking direction of the first films and thesecond films; burying the insulating member in the trenches; forming aplurality of holes by removing selectively the insulating member, theholes being spaced from each other in the first direction in each of thetrenches; and forming the plurality of semiconductor pillars extendingin the stacking direction in the holes via the insulating layers. 17.The method according to claim 16, further comprising setting back sidesurfaces of the holes by etching after forming the holes.
 18. The methodaccording to claim 16, wherein one of the semiconductor pillars isformed in one of the holes via a charge accumulation layer.
 19. Themethod according to claim 16, wherein one of the semiconductor pillarsis formed in one of the holes via a block layer, a charge accumulationlayer, and a tunnel layer, each of the insulating layers being a tunnellayer.
 20. The method according to claim 16, wherein a length of each ofthe trenches in the first direction is made longer than a length of eachof the trenches in the second direction.
 21. The method according toclaim 16, further comprising dividing the stacked body in the seconddirection at a position differing from the trenches.